Panel-Shaped Semiconductor Module

ABSTRACT

A solar battery module as a panel-shaped semiconductor module comprises multiple rod-shaped electric power generation semiconductor elements arranged in multiple rows and columns, a conductive connection mechanism connecting in series multiple semiconductor elements in each column and electrically connecting in parallel multiple semiconductor elements in each row, and a conductive inner metal case housing the multiple semiconductor elements and constituting the conductive connection mechanism, wherein each row of semiconductor elements is housed in each reflecting surface-forming groove of the inner metal case, the positive electrodes of the semiconductor electrodes are connected to the bottom plate and the negative electrodes are connected to finger leads, and the top is covered with a transparent cover member.

TECHNICAL FIELD

The present invention relates to a panel-shaped light receiving oremitting semiconductor module and particularly to a semiconductor modulecomprising multiple rod-shaped semiconductor elements (semiconductordevices).

BACKGROUND TECHNOLOGY

A variety of solar batteries (solar battery modules and solar batterypanels) comprising external lenses for yielding large output power bymeans of a small light receiving area have been proposed. However,because the larger areas are realized in silicon solar batteries andproduction cost of solar battery cells and solar battery modules isreduced, light collection by external lenses is less used.

On the other hand, in the solar battery using expensive compoundsemiconductors such as gallium arsenide (GaAs), light collection byexternal lenses is assumed to be economical and proposed in manydocuments.

The U.S. Pat. No. 4,136,436 and the U.S. Pat. No. 6,204,545 by theinventor of the present application propose a spherical or partiallyspherical solar battery cell made of granular silicon crystal as atechnique for efficient use of expensive silicon raw material.

The inventor of the present application proposed in the JapaneseLaid-Open Patent Publication No. 2001-168369 a solar battery modulehaving spherical solar battery cells in which a reflecting plate isprovided on the back in a close contact manner. The inventor alsoproposed in the International Publication No. WO03/056633 a sphericalsolar battery cell housed in a synthetic resin capsule having a diameterlarger than the cell and filled with a synthetic resin for lightcollection. They have a smaller collecting power compared with use ofexternal lenses, however they can be realized in a relatively simplestructure.

The US Patent Publication No. 5,482,568 discloses a micromirror solarbattery in which multiple cone-shaped reflecting mirrors are provided ina case, a solar battery cell having a flat light-receiving surface isplaced at the bottom of each cone, the sunlight collected by the coneilluminates the top surface of the solar battery cell, and the heat isreleased from the underside of the cone. The flat solar battery cellreceives light only at the top surface and the reflection loss is notsmall. Therefore, it is difficult to sufficiently increase the incidentlight usage rate. Furthermore, this micromirror solar battery has thesolar battery cells at the bottom of the case so as to prevent the solarbattery cells from heating up due to light collection.

The US Patent Publication No. 5,355,873 discloses a light collectiontype solar battery module having spherical solar battery cells. A thinmetal sheet (common electrode) has multiple nearly semisphericalrecesses with reflecting inner surfaces. Legs are formed at the centersof the recesses for supporting solar battery cells. A conductive meshsupports multiple solar battery cells at their middle parts. Themultiple solar battery cells are set in multiple recesses andelectrically connected to the legs. The multiple solar battery cells areconnected in parallel by the conductive mesh and sheet. The solarbattery cells have no electrode at the top, bottom, or either end and,therefore, the electric current distribution is uneven within a solarbattery cell. Hence, it is difficult to improve the electric powergeneration efficiency. Furthermore, all solar battery cells mounted onthe sheet are connected in parallel, which is inconvenient forincreasing the output voltage of the solar battery module.

The US Laid-Open Patent Publication No. 2002/0096206 discloses a solarbattery module in which spherical solar battery cells are provided inthe centers of multiple partially spherical recesses, respectively, therecesses each have a reflecting inner surface, multiple recesses areformed by two thin metal plates and an insulating layer between them,and the two thin metal plates are connected to the positive and negativeelectrodes of the spherical solar battery cell at the bottom partthereof to connect in parallel multiple solar battery cells.

In the above solar battery module, the spherical solar battery cells areelectrically connected to the two thin metal plates at the bottom part.This causes a drawback that the distance between the upper half lightreceiving surface and the positive and negative electrodes of aspherical solar battery cell is large and the resistance loss uponoutput electric current retrieval is increased. Furthermore, all solarbattery cells of the solar battery module are connected in parallel,which is inconvenient for increasing the output voltage of the solarbattery module.

The inventor of the present application disclosed in the InternationalPublication No. WO02/35612 a rod-shaped light receiving or emittingsemiconductor element having a pair of electrodes on either end face anda solar battery module using the semiconductor element. However, whenthis rod-shaped semiconductor element has a higher length/diameterratio, the resistance between the electrodes is increased. Therefore,the ratio is desirably set for approximately 1.5 or lower.

Patent Document 1: US Patent Publication No. 4,136,436;

Patent Document 2: US Patent Publication No. 6,204,545;

Patent Document 3: Japanese Laid-Open Patent Publication No.2001-168369;

Patent Document 4: International Publication No. WO03/056633;

Patent Document 5: US Patent Publication No. 5,482,568;

Patent Document 6: US Patent Publication No. 5,355,873; and

Patent Document 7: US Laid-Open Patent Publication No. 2002/0096206.

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention

As in the solar battery modules described in the above publications,when spherical or partially spherical, granular solar battery cells areused to constitute a solar battery module, the number of points toelectrically connect the electrodes of the solar battery cells to thepositive and negative electrode conductors of the module and the numberof wire connections are increased, which is inconvenient for massproduction.

When spherical solar battery cells are mounted in the centers ofpartially spherical recesses and light is collected by the reflectingsurfaces of the recesses to illuminate the solar battery cells with thesunlight, there are spaces between the recesses, which isdisadvantageous in increasing the usage rate of the incident sunlight.Furthermore, the ratio of the light receiving surface of the lightcollecting recesses to the light receiving surface of the solar batterycells in a plane view cannot be largely increased. Therefore, it isdifficult to increase the output power in relation to the light input tothe solar battery module surface.

For light collection by lenses in a solar battery module having granularsolar battery cells, the same number of lenses circular in a plane viewsas the solar battery cells are required. This large number of lensescomplicates the structure.

For using a light collection mechanism of the light reflecting type, acooling mechanism for effectively cooling the solar battery cells isnecessary because the solar battery cells significantly heat up. Whenthe reflecting surface is partially spherical, it is difficult to createa smooth passage of the cooling fluid. In such a case, it is not easy toimprove the cooling performance.

When multiple solar battery cells in a solar battery module are allconnected in parallel, the output voltage of the solar battery module isequal to the output voltage of the solar battery cells. However, it isdesirable that the output voltage of the solar battery module ischangeable and, in the case of a light emitting panel in which multiplelight emitting diodes are installed, the input voltage to the panel arechangeable.

The object of the invention of the present application is to provide apanel-shaped semiconductor module using semiconductor elements having alarger light receiving area with no increase in the resistance betweenelectrodes, to provide a panel-shaped semiconductor module having asmaller number of electrical connection points of semiconductor elementsand wire connections, to provides a panel-shaped semiconductor modulehaving a larger collecting power, to provides a panel-shapedsemiconductor module advantageous for forming a lens part, and toprovide a panel-shaped semiconductor module advantageous for improvingthe cooling performance.

Means to Solve the Problem

The panel-shaped semiconductor module relating to the present inventionis a panel-shaped light receiving or emitting semiconductor modulecharacterized by comprising multiple rod-shaped semiconductor elementseach having light receiving or emitting capability and an axis andarranged in multiple rows and columns with their conducting directionaligned and their axes oriented in the row direction, a conductiveconnection mechanism electrically connecting in parallel multiplesemiconductor elements in each row and electrically connecting in seriesmultiple semiconductor elements in each column, and a conductive innermetal case housing the multiple semiconductor elements and constitutingthe conductive connection mechanism.

The multiple semiconductor elements each have a rod-shaped baseconsisting of a p-type or n-type semiconductor crystal, anotherconductive layer formed on a surface of the base except for a strap ofarea and having a conductivity type different from the base, a nearlycylindrical pn junction formed by the base and another conductive layer,and first and second electrodes formed on surfaces of the base on eitherside of the axis in a form of a strap parallel to the axis andohmic-connected to the strap of area of the base and the otherconductive layer, respectively.

The inner metal case comprises multiple reflecting surface-forminggrooves each housing a row of multiple semiconductor elements and havinga width decreasing from an opening to a bottom. The reflectingsurface-forming grooves each comprises a light reflecting bottom plateand a pair of light reflecting oblique plates extending upward fromeither end of the bottom plate in an integrated manner.

The bottom plate has a mount protruding in a center portion in a widthdirection, on which a corresponding row of multiple semiconductorelements is placed and to which one of the first and second electrodesof the semiconductor elements is electrically connected. Multiple fingerleads electrically connected to one of the oblique plates of eachreflecting surface-forming groove and electrically connected to theother of the first and second electrodes of the corresponding row ofmultiple semiconductor elements are formed. A cutoff slit for cuttingoff the conductive part short-circuiting the first and second electrodesof a corresponding row of multiple semiconductor elements is formed inthe bottom plate on one side of the mount over the entire length of therow.

ADVANTAGES OF THE INVENTION

The semiconductor element has a base, another conductive layer having aconductivity type different from that of the base, a pn junction, andfirst and second electrodes. The first and second electrodes areprovided on the surfaces of the base on either side of the axis in theform of a strap parallel to the axis and ohmic-connected to the base andother conductive layer, respectively. Therefore, the distance betweenthe first and second electrodes never exceeds the diameter of the baseeven if the ratio of the axial length to the diameter of the base isincreased. Therefore, the ratio can be increased to a desired value.Then, the semiconductor element is increased in length so that thenumber of points to electrically connect multiple semiconductor elementscan be decreased, simplifying the structure of the conductive connectionmechanism.

The conductive connection mechanism connects in parallel multiplesemiconductor elements in each row and connects in series multiplesemiconductor elements in each column. When some semiconductor elementsfail for some reason, the current flows through an alternative pathbypassing the failed semiconductor elements, whereby all normalsemiconductor elements continue to work.

The inner metal case comprises multiple reflecting surface-forminggrooves having a width decreasing from the opening to the bottom. Eachreflecting surface-forming groove comprises of a light reflecting bottomplate and a pair of light reflecting oblique plates. A corresponding rowof multiple semiconductor elements is placed on a mount provided at thecenter portion of the bottom plate of the reflecting surface-forminggroove. One of the first and second electrodes of the multiplesemiconductor elements is electrically connected to the mount.

In this way, in the case of a light receiving semiconductor module,light collected by the reflecting surfaces of the reflectingsurface-forming grooves can enter the semiconductor elements. The widthat the opening of the reflecting surface-forming grooves can be three tofour times larger or even much larger than the diameter of thesemiconductor elements to increase the ratio of the reflectingsurface-forming groove (light collection part) to the light receivingsurface of the semiconductor elements, thereby increasing the lightcollecting magnification. In other words, a smaller number ofsemiconductor elements can effectively used to obtain high output power.

Furthermore, the semiconductor elements are placed on a mount protrudingfrom the center portion of the bottom plate of the reflectingsurface-forming groove. Light reflected by the bottom plate can enterthe lower half of the semiconductor element.

Each row of multiple semiconductor elements is housed in each ofmultiple reflecting surface-forming grooves. Therefore, multiplecylindrical lenses corresponding to multiple reflecting surface-forminggrooves, respectively, can advantageously used. The multiple reflectingsurface-forming grooves formed by the inner metal case each comprises abottom plate and a pair of oblique plates. The inner metal case can beconstituted by a sheet of metal plate, reducing the number of parts andsimplifying the structure.

The present invention can have the following various structures asdependent claims.

(1) The finger leads are each formed by bending a lower end of a scorecut part formed on an upper half of an oblique plate nearly at rightangle.

(2) The cutoff slits of the inner metal case are each formed by punchingout multiple tie bars to form a continuous cutoff slit after one of thefirst and second electrodes of each row of multiple semiconductorelements is connected to the mount and the other of the first and secondelectrodes is connected to the finger lead.

(3) An outer metal case fitted on an underside of the inner metal caseand having a cross section nearly similar to that of the inner metalcase and an electrically insulating synthetic resin layer interposedbetween the inner and outer metal cases are provided and the inner andouter metal cases are bonded and integrated via the electricallyinsulating synthetic resin layer.

(4) In the above (3), extensions each extending beyond either end of theinner metal case by a predetermined length in the row direction areprovided at either end of the outer metal case in the row direction andside plug blocks made of an insulating material are fitted in and fixedto case housing grooves formed in the extensions.

(5) In the above (4), the reflecting surface-forming grooves of theinner metal case are filled with a transparent flexible insulatingsynthetic resin material to embed the semiconductor elements and fingerleads therein.

(6) In the above (4), a glass or synthetic resin cover member fixed tothe inner metal case and side plug blocks for covering a top of theinner metal case is provided.

(7) In the above (6), the cover member has multiple cylindrical lensparts corresponding to multiple rows of semiconductor elements,respectively.

(8) A duct member forming a passage for a cooling fluid is provided onan outer surface of the outer metal case.

(9) An antireflection coating is formed on surfaces of the semiconductorelements except for the areas where the first and second electrodes areprovided.

(10) The base of the semiconductor elements is made of a p-type Simonocrystal or Si polycrystal, the other conductive layer is formed bydiffusing P, Sb, or As as an n-type impurity, and the semiconductorelements are solar battery cells.

(11) The base of the semiconductor elements is made of an n-type Simonocrystal or Si polycrystal, the other conductive layer is formed bydiffusing B, Ga, or Al as a p-type impurity, and the semiconductorelements are solar battery cells.

(12) The semiconductor elements are light emitting diode elements havinglight emitting capability.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of a solar battery module relating toEmbodiment 1.

FIG. 2 is a cross-sectional view at the line II-II in FIG. 1.

FIG. 3 is a cross-sectional view at the line III-III in FIG. 1.

FIG. 4 is a plane view of the solar battery module with a cover memberremoved.

FIG. 5 is an enlarged view of the core part of FIG. 4.

FIG. 6 is a perspective view of the side plug block.

FIG. 7 is a perspective view of the core part of the reflectingsurface-forming groove of the inner metal case.

FIG. 8 is an enlarged cross-sectional view of the semiconductor element.

FIG. 9 is a cross-sectional view at the line IX-IX in FIG. 8.

FIG. 10 is an enlarged perspective view of the semiconductor element.

FIG. 11 is a circuit diagram equivalent to the conductive connectionmechanism.

FIG. 12 is a perspective view equivalent to FIG. 7 of a modifiedembodiment.

FIG. 13 is a cross-sectional view equivalent to FIG. 2 of a solarbattery module relating to Embodiment 2.

FIG. 14 is an enlarged cross-sectional view of a light emittingsemiconductor element relating to Embodiment 3.

FIG. 15 is a cross-sectional view at the line XIV-XIV in FIG. 13.

DESCRIPTION OF NUMERALS

-   M, Ma solar battery module (panel-shaped semiconductor module)-   1 semiconductor element-   2 conductive connection mechanism-   3 inner metal case-   4 outer metal case-   4A extension-   5 cover member-   5 a cylindrical lens part-   6 insulating synthetic resin material-   7 synthetic resin layer-   8 side plug block-   11 base-   12 diffusion layer-   13 pn junction-   14 positive electrode-   15 negative electrode-   16 antireflection coating-   20 reflecting surface-forming groove-   21 bottom plate-   21 a mount-   22, 23 oblique plate-   25, 25A finger lead-   26 cutoff slit-   35 duct member-   40 light emitting semiconductor element (light emitting diode    element)-   41 base-   42 diffusion layer-   43 pn junction-   44 positive electrode-   45 negative junction-   46 antireflection coating

BEST MODE FOR IMPLEMENTING THE INVENTION

The panel-shaped semiconductor module of the present invention basicallycomprises multiple rod-shaped light receiving or emitting semiconductorelements arranged in multiple rows and columns, a conductive connectionmechanism connecting in parallel multiple semiconductor elements in eachrow and connecting in series multiple semiconductor elements in eachcolumn, and an inner metal case housing the multiple semiconductorelements and constituting the conductive connection mechanism, whereinthe inner metal case has multiple reflecting surface-forming grooveshousing multiple rows of semiconductor elements, respectively, andhaving a width decreasing from the opening to the bottom.

Embodiment 1

The panel-shaped semiconductor module relating to Embodiment 1 is asolar battery module (solar battery panel) receiving the sunlight andgenerating electric power. This solar battery module M will be describedwith reference to the drawings. As illustrated in FIGS. 1 to 5, thesolar battery module M comprises multiple semiconductor elements 1having light receiving capability, a conductive connection mechanism 2electrically connecting the semiconductor elements 1 (see FIG. 11), aninner metal case 3 housing the multiple semiconductor elements 1, anouter metal case 4 fitted on the underside of the inner metal case 3, atransparent cover member 5 covering the top of the inner metal case 3, asilicone rubber insulating synthetic resin material 6 introduced in theinner metal case 3, a synthetic resin layer 7 bonding the inner andouter metal cases 3 and 4 together, multiple side plug blocks 8, and tworeinforcement plates 9.

As illustrated in FIGS. 8 to 10, the semiconductor element 1 is arod-shaped solar battery cell having an axis 1 a and a nearly circular(a partial circle close to a circle) cross section. The semiconductorelement 1 has a p-type silicon monocrystal rod-shaped base 11, an n-typediffusion layer 12 (which corresponds to another conductive layer havinga conductivity type different from that of the base 11), a pn junction13, positive and negative electrodes 14 and 15, and an antireflectioncoating 16. The semiconductor element 1 receives the sunlight andgenerates photovoltaic power of approximately 0.5 to 0.6 V.

The base 11 is a p-type silicon monocrystal column having a diameter ofapproximately 1.8 mm and a length of approximately 5 mm with a flatbottom section 11 a in the form of a strap (for example having a widthof approximately 0.6 mm) parallel to the axis 1 a of the column (seeFIG. 9). The diffusion layer 12 is an n-type conductive layer formed bythermal-diffusing P (phosphorus) in the surface part of the base 11 to adepth of 0.5 to 1.0 μm except for a strap of area including the flatsection 11 a and its vicinity at either end thereof.

The p-type base 11 and n-type diffusion layer 12 together form a nearlycylindrical (a partial cylinder close to a cylinder) pn junction 13. Thepn junction 13 surrounds most of the periphery of the semiconductorelement 1 around the axis 1 a. A strap of positive electrode 14 having awidth of approximately 0.4 mm is provided on the flat section 11 a ofthe base 11. A strap of negative electrode 15 having a width ofapproximately 0.4 mm is provided on the surface of the base 11 at aposition across the axis 1 a from the positive electrode 14. Thepositive electrode 14 is formed by firing a paste of silver mixed withaluminum. The negative electrode 15 is formed by firing a paste ofsilver mixed with a small amount of antimony. The positive and negativeelectrodes 14 and 15 are provided on the surface of the base 11 oneither side of the axis 1 a in the form of a strap parallel to the axis1 a. The positive electrode 14 is ohmic-connected to the base 11 and thenegative electrode 15 is ohmic-connected to the diffusion layer 12.

An antireflection coating 16 consisting of a silicon oxide coating orsilicon nitride coating is formed on the surface of the semiconductorelement except for the areas where the positive and negative electrodes14 and 15 are provided for the purpose of antireflection and siliconsurface passivation. When the semiconductor element 1 is illuminatedwith the sunlight bm and the silicon monocrystal of the base 11 absorbsthe sunlight, carriers (electrons and holes) are generated, the pnjunction 13 separates the electrons from the holes, and photovoltaicpower is generated between the positive and negative electrodes 14 and15. Even if the incident direction of the sunlight entering indirections perpendicular to the axis 1 a changes, the semiconductorelement 1 has uniform light reception sensitivity and efficientlyreceives the sunlight bm in a wide range of directions and generateselectric power.

As illustrated in FIG. 10, the positive and negative electrodes 14 and15 are positioned nearly symmetrically about the axis 1 a of the base11. For carriers generated in the base 11 upon receiving the sunlightbm, the sum of the distances from any circumferentially different point,for example A, B, or C, to the positive and negative electrodes 14 and15 is nearly equal in any plane perpendicular to the axis 1 a of thebase 11, namely (a+b)≈(a′+b′)≈(a″+b″). The photoelectric currentdistribution is uniform with regard to the axis 1 a of the base 11 andresistance loss due to uneven distribution can be reduced.

As illustrated in FIGS. 2, 4, 5, and 7, multiple semiconductor elements1 are arranged in multiple rows and columns in multiple reflectingsurface-forming grooves 20 of the inner metal case 3 with theirconducting direction aligned and their axes 1 a oriented in the rowdirection. Multiple semiconductor elements 1 are arranged with theirpositive electrode 14 at the bottom and their negative electrode 15 atthe top, whereby they have a vertically downward conducting direction.

The inner metal case 3 is formed by punching a thin plate of iron/nickelalloy (Ni 42% and Fe 58%) into a monolithic item in a press machine witha specifically-shaped die. The light receiving inner surface of theinner metal case 3 is mirror finished or either gold or silver platedfor improved light reflecting performance.

As illustrated in FIGS. 2, 4, 5, and 7, the inner metal case 3 comprisesthe same number of gutter-like reflecting surface-forming grooves 20 asthe rows of semiconductor elements 1, and flanges 3 f and couplingterminals 3 a at the right and left ends. The reflecting surface-forminggrooves 20 have an inverted trapezoidal cross section having a widthlinearly decreasing from the opening to the bottom. Each reflectingsurface-forming groove 20 comprises a bottom plate 21 and a pair ofoblique plates 22 and 23 extending upward from either end of the bottomplate 21. The top ends of the oblique plates 22 and 23 of adjacentreflecting surface-forming grooves 20 are coupled by a narrow couplingplate 24.

Each bottom plate 21 has a mount 21 a having a trapezoidal cross sectionand protruding upward at the center portion in the width direction. Acorresponding row of multiple semiconductors 1 is placed on the mount 21a and their positive electrodes 14 are bonded to the mount 21 a using aconductive epoxy resin for electrical connection. Multiple finger leads25 integrally extend from the middle part of the right oblique plate 23of each reflecting surface-forming groove 20 to be electricallyconnected to the negative electrodes 15 of the corresponding row ofmultiple semiconductor elements 1, respectively. The negative electrodes15 of the semiconductor elements 1 are bonded to the finger leads 25using a conductive epoxy resin for electric connection. The finger leads25 are each formed by bending the lower end of a score cut part formedon the upper half of the right oblique plate 23 at right angle (see FIG.7).

As illustrated in FIG. 2, a cutoff slit 26 is formed in each bottomplate 21 on the right side of the mount 21 a over the entire length inthe row direction (the entire length of the inner metal case 3) forcutting off the conduction from the multiple positive electrodes 14 ofthe corresponding row of multiple semiconductor elements 1 to themultiple finger leads 25 so as to cut off the conductive partshort-circuiting between the positive and negative electrodes 14 and 15of the corresponding row of multiple semiconductor elements 1.

Each cutoff slit 26 is formed by punching out the tie bars (notillustrated) of multiple tie bar punch-out portions 26 a to form acontinuous cutoff slit 26 after the positive electrodes 14 of each rowof multiple semiconductors 1 are bonded to the mount 21 a and thenegative electrodes 15 are bonded to the finger leads 25.

As described above, after multiple semiconductor elements 1 are arrangedin multiple rows and columns in the inner metal case 3 with theirpositive electrodes 14 connected to the mount 21 a and their negativeelectrodes 15 connected to the finger leads 25 and the cutoff slit 26 isformed in the bottom plate 21 of each reflecting surface-forming groove20, the semiconductor elements 1 in each row are connected in parallelby the inner metal case 3 and multiple finger leads 25 and multiplesemiconductor elements in each column are connected in series by theinner metal case 3 and multiple finger leads 25. In this way, the innermetal case 3 including multiple finger leads 25 constitutes a conductiveconnection mechanism 2 electrically connecting in series multiplesemiconductor elements 1 in each column and electrically connecting inparallel multiple semiconductor elements 1 in each row (see FIG. 11).

As illustrated in FIGS. 2 to 5 and 7, an outer metal case 4 having across section nearly similar to the inner metal case 3 is fitted on theunderside of the inner metal case 3. The outer metal case 4 is formed byforming the same iron/nickel alloy plate (for example having a thicknessof 0.4 mm) as the inner metal case 3. The outer metal case 4 has flanges4 f at either end in the column direction. The outer metal case 4 has ateither end in the row direction extensions 4A extending beyond eitherend of the inner metal case 3 in the row direction by a predeterminedlength. The inner and outer metal cases 3 and 4 are bonded andintegrated together via an electrically insulating synthetic resin layer7 (having a thickness of 0.1 to 0.5 mm) consisting of a heat-resistantinsulating adhesive such as polyimide resin introduced between them.

As illustrated in FIGS. 3 and 5 to 7, side plug blocks 8 made of aninsulating material (for example a ceramic or glass material) are fittedin case housing grooves 27 formed in the extensions 4A of the outermetal case 4 and bonded thereto using a heat-resistant insulatingsynthetic resin adhesive such as polyimide resin for completely sealingthe ends of the inner metal case 3 in the row direction. The side plugblocks 8 have an oblique inner surface 8 a tilted similarly to theoblique plates 22 and 23 for improved light reception.

As illustrated in FIG. 2, a flexible transparent silicone rubberinsulating synthetic resin material 6 is introduced into the reflectingsurface-forming grooves 20 of the inner metal case 3 so as to embed thesemiconductor elements 1 and finger leads 25, degassed under reducedpressure, and cured.

As illustrated in FIGS. 1, 2, and 3, a transparent glass or syntheticresin cover member 5 covering the top of the inner metal case 3 andfixed to the inner metal case 3 and side plug blocks 8 is provided. Thecover member 5 is desirably made of white reinforced glass orborosilicate glass. The cover member 5 has multiple cylindrical lensparts 5 a corresponding to multiple rows of semiconductor elements 1,respectively, at the upper part and engaging parts 5 b fitted in theupper parts of multiple reflecting surface-forming grooves 20 at thelower part. The cover member 5 has flat parts 5 c at right and left endsin FIGS. 1 and 2.

In order to fix the cover member 5 to the inner metal case 3, the covermember 5 is attached to the inner metal case 3 with a thick layer ofsilicone resin applied on the entire underside surface of the covermember 5, whereby the cover member 5 is bonded to the silicone rubber 6(insulating synthetic resin material) and oblique plates 22 and 23 ofmultiple reflecting surface-forming grooves 20, to other top surfaceportions of the inner metal case 3, and to the inner sides of multipleside plug blocks 8. Then, the entire structure is heated under reducedpressure to cure the silicone resin adhesive/sealing material 29. Here,the inner space of each reflecting surface-forming groove 20 iscompletely filled with the silicone rubber 6 and adhesive/sealingmaterial 29. The right and left flat parts 5 c of the cover member 5 andflanges 3 f and 4 f are fastened together by multiple metal or syntheticresin bolts 30. Here, the bolts 30 are insulated from the flanges 3 f.

As illustrated in FIGS. 1 and 3, a polyimide resin reinforcement plate 9closing the top of multiple side plug blocks 8 is provided and fixedusing the same adhesive/sealing material as the above describedadhesive/sealing material 29 for reinforcing the integrity of themultiple side plug blocks 8 and inner metal case 3.

As illustrated in FIGS. 1 to 5, coupling terminal plates 3 a are exposedat right and left ends of the inner metal case 3 and extend over theentire length in the row direction for electrically connecting multiplesolar battery modules M or coupling the output retrieval lines. Eachcoupling terminal plate 3 a has multiple bolt holes 31.

FIG. 11 shows an equivalent circuit to multiple semiconductor elements 1and the conductive connection mechanism 2 of the above described solarbattery module M. The semiconductor elements 1 are presented by diodes1A. In this equivalent circuit, multiple diodes 1A in each row areconnected in parallel and multiple diodes 1A in each column areconnected in series, whereby all diodes are serial/parallel-connected ina mesh circuit. Photovoltaic power is generated between the positive andnegative electrode terminals 18 and 19.

Function and advantages of the above described solar battery module Mwill be described hereafter.

The rod-shaped semiconductor elements 1 of this solar battery module Mare nearly symmetric about their axes and can receive the sunlight inany direction (directions over approximately 270 degrees), exhibitingsensitivity for a wide angle of light reception. The inner metal case 3has multiple reflecting surface-forming grooves 20 having a widthlinearly decreasing from the opening to the bottom. A row of multiplesemiconductors 1 is placed at the bottom of each reflectingsurface-forming groove 20. The reflecting surface-forming groove 20 hasa light reflecting inner surface. Hence, the sunlight falls on thesemiconductor elements 1 after multiple reflections on the inner surfaceof the reflecting surface-forming grove 20.

The width at the opening of the reflecting surface-forming groove 20 canbe 3 to 15 times larger than the diameter of the semiconductor elements1 so that the horizontal area ratio of the reflecting surface-forminggroove 20 (light collection part) to the projected light receiving crosssection of the semiconductor elements 1 in each row is increased forlarger collecting power. Therefore, the necessary number or lightreceiving area of semiconductor elements 1 can be reduced, which isadvantageous for silicon cost and production cost. Furthermore, thesemiconductor elements 1 are fixed on the mount 21 a of the bottom plate21 of the reflecting surface-forming groove 20. Light reflected by thebottom plate and scattered light can easily enter the semiconductorelements 1, the semiconductor elements 1 have a larger light receivingrange. Additionally, the semiconductor elements 1 can easily bepositioned and fixed using a conductive epoxy resin.

The transparent flexible silicone rubber 6 is used to embed thesemiconductor elements 1 in the reflecting surface-forming groove 20.The semiconductor elements 1 are completely protected from externalimpact or moisture or air. The silicone rubber 6 absorbs expansion orshrinkage of the solar battery module M due to temperature changes. Therefractive index of the silicone rubber 6 is close to that of the covermember 5 and antireflection coating 16, which reduces reflection loss atthe interface. Furthermore, the silicone rubber 6 optically couples thesemiconductor elements 1, which makes it easier for not only collecteddirect light but also scattered light resulting from multiple internalreflections to enter the semiconductor elements 1.

In addition, the cover member 5 has cylindrical lens parts 5 eachcorresponding to a reflecting surface-forming groove 20. The sunlightenergy intensity can be approximately 5 to 15 times increased throughthe light collection by the cylindrical lens parts 5 a. The output powerof the semiconductor elements 1 can be approximately 7 to 15 timesincreased through the light collection by the cylindrical lens parts 5 aand light collection by the reflecting surface-forming grooves 20compared with the case of no light collection by them.

The conductive connection mechanism 2 connects in parallel multiplesemiconductor elements 1 in each row and connects in series multiplesemiconductor elements 1 in each column. When some semiconductorelements 1 fail for some reason (disconnection, poor connection, inshade, etc.), the current flows through an alternative path bypassingthe failed semiconductor elements, whereby all normal semiconductorelements 1 continue to work.

The semiconductor elements 1 have a nearly columnar rod-shape. Thepositive and negative electrodes 14 and 15 are provided on the surfaceon either side of the axis in the form of a strap parallel to the axisand ohmic-connected to the base 11 or to the diffusion layer 12.Therefore, no matter how much the axial length/diameter ratio of thebase 11 is increased, the distance between the positive and negativeelectrodes 14 and 15 is smaller than the diameter of the base 11 and theelectric resistance between the positive and negative electrodes 14 and15 can be maintained small. The semiconductor elements 1 can beincreased in length to reduce the number of electric connections ofmultiple semiconductor elements 1, thereby simplifying the structure ofthe conductive connection mechanism 2.

The solar battery module M easily heats up and, when heating up, itspower generation efficiency is lowered. The inner and outer metal cases3 and 4 are made of a thin metal plate and integrated together. Theinner metal case 3 has multiple gutter-like reflecting surface-forminggrooves 20, of which the inner surfaces serve as a reflector/lightcollector and the back sides serve as a radiator. Particularly, thereflecting surface-forming grooves 20 have a W-shaped cross section withthe upwardly bulging mount 21 a of the bottom plate 21, improvingrigidity and strength and increasing the heat dissipation area. Thermalenergy absorbed by the solar battery module M is transmitted through theinner metal case 3, polyimide synthetic resin thin layer 7, and outermetal case 4 and released outside.

The reflecting surface-forming grooves 20 of the inner metal case 3serve both as a container to receive the silicone rubber 6 and as areception part for engaging with and positioning the engaging part 5 bof the cover member 5.

The finger leads 25 corresponding to the respective semiconductorelements 1 are integrally formed on one oblique plate 23 of a reflectingsurface-forming groove 20. The finger leads 25 are bonded to thenegative electrodes 1 of the semiconductors 1 using a conductive epoxyresin. In this way, separate connection leads can be eliminated.

The finger leads 25 can be produced as score cut parts formed on theoblique plate 23 while the inner metal case 3 is produced. Uponassembly, the positive electrodes 14 of each row of multiplesemiconductors 1 are bonded to the mount 21 a using a conductive epoxyresin and then the score cut parts are bent to form the finger leads 25,which are then bonded to the negative electrodes 15 of the semiconductorelements 1 using a conductive epoxy resin. After all finger leads 25 arebonded to the negative electrodes of the semiconductor elements 1 in thesolar battery module M, the tie bars (not illustrated) connectingmultiple tie bar punch-out portions 26 a are punched out. The fingerleads 25 also serve as a marking for positions where the semiconductorelements 1 are placed. The multiple tie bars serve to maintain theintegrity of the inner metal case 3 while the inner metal case 3 isformed and allow the inner metal case 3 to be formed from a sheet ofmetal plate, reducing the number of parts and simplifying the structure.

Partial modifications of the above described embodiment will bedescribed hereafter.

1) As illustrated in FIG. 12, in place of the finger leads 25,connection pieces 50 formed separately from the inner metal case 3 bypunching out a conductive metal, such as iron and nickel, thin plate areprovided at positions corresponding to the semiconductor elements 1 andfinger leads 25A horizontally extending to the left are formed at thelower end of the connection pieces 50.

The connection piece 50 is obtained by integral-forming a couplingsection 50 a to be bonded to the coupling part 24 of the inner metalcase 3, oblique sections 50 b and 50 c provided on either side of thecoupling section 50 a to be bonded to the oblique plates 22 and 23, andthe finger lead 25A. For example, the connection piece 50 is bonded tothe coupling part 24 and oblique plates 22 and 23 on the either sidethereof using a conductive epoxy resin and the leading end of the fingerlead 25A is bonded to the negative electrode 15 of the correspondingsemiconductor element 1 using a conductive epoxy resin for electricconnection. Here, the coupling section 50 a and oblique sections 50 band 50 b have a width of for example 2 to 3 mm and the finger lead 25Ahas a width of for example 0.5 to 1 mm.

2) The above described solar battery module M has nine reflectingsurface-forming grooves 20. However, several tens of rows and severaltens of columns can be provided. The materials of the inner metal case3, positive and negative electrodes 14 and 15, and outer metal case 4and various synthetic resin materials are not restricted to the abovedescribed embodiment and can be changed by a person of ordinary skill inthe field as appropriate.

The diameter of the base 11 of the semiconductor elements 1 is notrestricted to the above described embodiment and can be approximately1.0 to 2.5 mm. The axial length of the semiconductor elements 1 is notrestricted to the above described embodiment and can be any length notsmaller than 5.0 mm. The semiconductor elements 1 can have a lengthextending over the entire row. In such a case, it is desirable thatmultiple finger leads 25 are provided at proper intervals in the rowdirection.

3) The base 11 of the semiconductor elements 1 can be a p-type siliconpolycrystal and the n-type impurity forming the diffusion layer 12 canbe Sb or As. Alternatively, the semiconductor elements 1 can comprise ann-type silicon monocrystal or polycrystal base 11 and a diffusion layer12 having a p-type impurity such as B, Ga, and Al. The pn junction 13 isnot necessarily created by the diffusion layer 12. The pn junction 13can be created by forming a film on the surface of the base 11 orinjecting ions in the surface of the base 11 to form another conductivelayer having a conductivity type different from that of the base 11.

4) The flat section 11 a of the base 11 of the semiconductor elements 1can be omitted. The base 11 can be in the form of a rod having acircular cross section and the positive electrode has the same form asthe negative electrode 15. In such a case, the positive and negativeelectrodes can be made of metal materials of different colors so thatthey can be distinguishable from each other.

5) The cross section of the reflecting surface-forming grooves 20 of theinner metal case 3 is not particularly restricted to the above describedembodiment. Any groove having a width linearly or nonlinearly decreasingfrom the opening to the bottom for light collection capability can beused. The inner metal case 3 of a solar module M can be constituted bymultiple molded metal plates.

Embodiment 2

As illustrated in FIG. 13, a solar battery module Ma (panel-shapedsemiconductor module) has a duct member 35 fitted on the underside ofthe above described solar battery M. The solar battery module Ma has thesame structure as the solar battery module M except for the duct member35. Therefore, the same components are designated by the same referencenumerals and their explanation will be omitted. The duct member 35 hasan inverted trapezoidal body 35 a forming a coolant passage 36 togetherwith the outer metal case 4 for a forced or natural flow of a coolantfluid such as air and cooling water, and flanges 35 f extending fromright and left ends of the body 35 a. The flanges 35 f are each fastenedto the flat plate 5 of the cover member 5, flange 3 f of the inner metalcase 3, and flange 4 f of the outer metal case 4 by multiple bolts 30from below.

With a coolant such as air and cooling water running through the coolantpassage 36, the inner and outer metal cases 3 and 4 and semiconductorelements 1 can effectively be cooled. Particularly, the inner and outermetal cases 3 and 4 have intricate outer surfaces and accordingly have alarge heat transfer area. The semiconductor elements 1 are close to thecoolant. Therefore, a high cooling performance can be obtained.

Embodiment 3

This embodiment relates to light emitting semiconductor elements (lightemitting diodes) applied to a high output power light emitting diodemodule with a reflecting mechanism, which is a panel-shapedsemiconductor module. This high output power light emitting diode modulewith a reflecting mechanism comprises light emitting semiconductorelements in place of the semiconductor elements 1 of the above describedsolar battery module M.

The light emitting semiconductor element will be described hereafter.

As illustrated in FIGS. 14 and 15, a light emitting semiconductorelement 40 has a rod-shaped base 41 consisting of an n-typesemiconductor crystal, a p-type diffusion layer 42 formed in the surfacepart of the base 41 (which corresponds to another conductive layerhaving a conductivity type different from the base), a nearlycylindrical pn junction 43 formed by the base 41 and diffusion layer 42,positive and negative electrodes 44 and 45, and an antireflectioncoating 46.

The base 41 consists of an n-type GaAs crystal having a diameter of 1.0mm and a length of 5 mm with a flat bottom section 41 b in the form of astrap (having a width of approximately 0.2 to 0.3 mm) parallel to theaxis 41 a. The diffusion layer 42 is formed by thermal diffusing ap-type impurity Zn (zinc) in the surface part of the base 41 to a depthof 0.5 to 1.0 μm except for a strip of area consisting of the flatsection 41 b and its vicinity at either end thereof in thecircumferential direction. The positive and negative electrodes 44 and45 are made of silver-based materials. The negative electrode 44 isprovided on the flat section 41 b at the center in the width directionin the form of a strap extending over the entire length andohmic-connected to the base 41. The positive electrode 44 is provided onthe surface of the diffusion layer 42 at a position across the axis 41 aof the base 41 from the negative electrode 45 and ohmic-connected to thediffusion layer 42.

An antireflection coating 46 consisting of a thin silicon oxide coatingor silicon nitride coating and having passivation function is formed onthe surface of the base 41 and diffusion layer 42 except for the areaswhere the positive and negative electrodes 44 and 45 are formed. Thelight emitting semiconductor element 40 emits infrared light from nearthe pn junction 43 when a forward current runs from the positiveelectrode 44 to the negative electrode 45. Because the pn junction 43has a partial cylindrical form close to a cylinder, the generatedinfrared light crosses the surface of the semiconductor element 40 atright angle and exits outside. Therefore, internal reflection loss ofthe light is reduced and light emission efficiency is improved comparedwith the prior art light emitting diode having a flat pn junction.

In the high output power light emitting diode module with a reflectingmechanism in which the light emitting semiconductor elements 40 areinstalled in place of the semiconductor elements 1 of the abovedescribed embodiment, when a forward current is supplied from thepositive terminal to the negative terminal, the forward current runsthrough all light emitting semiconductor elements 40, leading toemission of infrared light. The infrared light emitted from the lightemitting semiconductor elements 40 exits outside through the cylindricallens parts 5 a of the cover member 5 directly from the reflectingsurface-forming groove 20 or after reflected on the reflecting surfaces.

The light emitting semiconductor elements 40 increase their light outputas the forward current is increased. However, conversion loss leads toheat generation and to rise in temperature, which reduces light emissionefficiency. This light emitting diode module is excellent in heatdissipation as the above described solar battery module M and thereforereduces the rise in the module temperature. Hence, a large light outputcan be obtained by supplying a large current to a smaller number oflight emitting semiconductor elements 40, reducing the light emittingdiode module production cost.

The light emitting diode module can be a useful industrial infraredgeneration apparatus such as a light source of medical equipment,various infrared sensors, and infrared lighting.

Partial modifications of the above described light emitting diode moduleand light emitting semiconductor element 40 will be described hereafter.

1) The light emitting diode module also can have a duct member as theabove described solar battery module Ma.

2) Various light emitting diodes are produced using varioussemiconductor materials and emit light of various light emissionwavelengths according to the characteristics of the semiconductormaterial. Any light emitting diode produced using such varioussemiconductor materials can be used. Other than infrared light, lightemitting diodes emitting visible or ultraviolet light may also be used.

The base can be constituted by a semiconductor crystal for exampleselected from GaAlAs, GaP, InGaP, GaN, GaInN, and SiC. SiC is ahexagonal crystal and yields a hexagonal column mono crystal. Such ahexagonal column mono crystal can be used to constitute the base.

The pn junction of the light emitting semiconductor element is notnecessarily created by a diffusion layer. The pn junction can also becreated by forming a film on the surface of the base or injecting ionsin the surface of the base to create another conductive layer having aconductivity type different from that of the base.

INDUSTRIAL APPLICABILITY

The solar battery module is applicable to various fields as a solarpower generation apparatus. The light emitting module is applicable tovarious fields according to the type of light generated.

1. A panel-shaped light receiving or emitting semiconductor modulecharacterized by comprising: multiple rod-shaped semiconductor elementseach having light receiving or emitting capability and an axis andarranged in multiple rows and columns with their conducting directionaligned and their axes oriented in the row direction; a conductiveconnection mechanism connecting in parallel multiple semiconductorelements in each row and electrically connecting in series multiplesemiconductor elements in each column; and a conductive inner metal casehousing said multiple semiconductor elements and constituting saidconductive connection mechanism; each of said multiple semiconductorelements comprising: a rod-shaped base consisting of a p-type or-n-typesemiconductor crystal; another conductive layer formed on a surface ofthe base except for a strap of area and having a conductivity typedifferent from the base; a nearly cylindrical pn junction formed by saidbase and said another conductive layer; and first and second electrodesformed on surfaces of said base on either side of the axis in a form ofa strap parallel to the axis and ohmic-connected to said strap of areaof said base and another conductive layer, respectively; said innermetal case comprising multiple reflecting surface-forming grooves eachhousing a row of multiple semiconductor elements and having a widthdecreasing from an opening to a bottom; said reflecting surface-forminggrooves each comprising a light reflecting bottom plate and a pair oflight reflecting oblique plates extending upward from either end of thebottom plate in an integrated manner; said bottom plate having a mountprotruding in a center portion in a width direction, on which acorresponding row of multiple semiconductor elements is placed and towhich one of the first and second electrodes of the semiconductorelements is electrically connected; and multiple metal finger leadselectrically connected to one of the oblique plates of each reflectingsurface-forming groove and electrically connected to the other of thefirst and second electrodes of the corresponding row of multiplesemiconductor elements being provided, and a cutoff slit for cutting offa conductive part short-circuiting the first and second electrodes of acorresponding row of multiple semiconductor elements being formed insaid bottom plate on one side of said mount over an entire length of therow.
 2. The panel-shaped semiconductor module according to claim 1;wherein said finger leads are each formed by bending a lower end of ascore cut part formed on an upper half of the oblique plate nearly atright angle.
 3. The panel-shaped semiconductor module according to claim2; wherein the cutoff slits of said inner metal case are each formed bypunching out multiple tie bars to form a continuous cutoff slit afterone of the first and second electrodes of each row of multiplesemiconductor elements is connected to said mount and the other of thefirst and second electrodes is connected to the finger lead.
 4. Thepanel-shaped semiconductor module according to any of claims 1 to 3;wherein an outer metal case fitted on an underside of said inner metalcase and having a cross section nearly similar to that of said innermetal case and an electrically insulating synthetic resin layerinterposed between said inner and outer metal cases are provided and theinner and outer metal cases are bonded and integrated via theelectrically insulating synthetic resin layer.
 5. The panel-shapedsemiconductor module according to claim 4; wherein extensions eachextending beyond either end of the inner metal case in the row directionby a predetermined length are provided at either end of said outer metalcase in the row direction and side plug blocks made of an insulatingmaterial are fitted in and fixed to case housing grooves formed in theextensions.
 6. The panel-shaped semiconductor module according to claim5; wherein the reflecting surface-forming grooves of said inner metalcase are filled with a transparent flexible insulating synthetic resinmaterial to embed said semiconductor elements and finger leads therein.7. The panel-shaped semiconductor module according to claim 5; wherein aglass or synthetic resin cover member fixed to said inner metal case andside plug blocks for covering a top of said inner metal case isprovided.
 8. The panel-shaped semiconductor module according to claim 7;wherein said cover member has multiple cylindrical lens partscorresponding to multiple rows of semiconductor elements, respectively.9. The panel-shaped semiconductor module according to any of claims 1 to3; wherein a duct member forming a passage for a cooling fluid isprovided on the outer surface of an outer metal case.
 10. Thepanel-shaped semiconductor module according to any of claims 1 to 3;wherein an antireflection coating is formed on surfaces of saidsemiconductor elements except for areas where the first and secondelectrodes are provided.
 11. The panel-shaped semiconductor moduleaccording to any of claims 1 to 3; wherein the base of saidsemiconductor elements is made of a p-type Si monocrystal or Sipolycrystal, said other conductive layer is formed by diffusing P, Sb,or As as an n-type impurity, and said semiconductor elements are solarbattery cells.
 12. The panel-shaped semiconductor module according toany of claims 1 to 3; wherein that the base of said semiconductorelements is made of an n-type Si monocrystal or Si polycrystal, saidother conductive layer is formed by diffusing B, Ga, or Al as a p-typeimpurity, and said semiconductor elements are solar battery cells. 13.The panel-shaped semiconductor module according to any of claims 1 to 3;wherein said semiconductor elements are light emitting diode elementshaving light emitting capability.